Efficient and Versatile Modeling of Mono- and Multi-Layer MoS2 Field Effect Transistor
Departement of Information Engineering, Marche Polytechnic University, 60131 Ancona, Italy
Department of Materials, Environmental Sciences and Urban Planning, Marche Polytechnic University, 60131 Ancona, Italy
Author to whom correspondence should be addressed.
Electronics 2020, 9(9), 1385; https://doi.org/10.3390/electronics9091385
Received: 1 August 2020 / Revised: 17 August 2020 / Accepted: 24 August 2020 / Published: 27 August 2020
(This article belongs to the Section Semiconductor Devices)
Two-dimensional (2D) materials with intrinsic atomic-level thicknesses are strong candidates for the development of deeply scaled field-effect transistors (FETs) and novel device architectures. In particular, transition-metal dichalcogenides (TMDCs), of which molybdenum disulfide (MoS
) is the most widely studied, are especially attractive because of their non-zero bandgap, mechanical flexibility, and optical transparency. In this contribution, we present an efficient full-wave model of MoS -FETs that is based on (1) defining the constitutive relations of the MoS active channel, and (2) simulating the 3D geometry. The former is achieved by using atomistic simulations of the material crystal structure, the latter is obtained by using the solver COMSOL Multiphysics. We show examples of FET simulations and compare, when possible, the theoretical results to the experimental from the literature. The comparison highlights a very good agreement.